China
Spain
Rusia
Italy
GermanyJAN2N5793
Part Number Overview
Manufacturer Part Number
JAN2N5793
Description
NPN TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 600mW Through Hole TO-78-6
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
600mA
Voltage - Collector Emitter Breakdown (Max)
40V
Vce Saturation (Max) @ Ib, Ic
900mV @ 30mA, 300mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
Power - Max
600mW
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/495
Mounting Type
Through Hole
Package / Case
TO-78-6 Metal Can
Supplier Device Package
TO-78-6
Base Product Number
2N5793
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Microchip Technology JAN2N5793
Documents & Media
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev Assembly Site 31/Jan/2024)
Quantity Price
-
Substitutes
-