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KSD227GBU
Part Number Overview
Manufacturer Part Number
KSD227GBU
Description
TRANS NPN 25V 0.3A TO92-3
Detailed Description
Bipolar (BJT) Transistor NPN 25 V 300 mA 400 mW Through Hole TO-92-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
KSD227GBU Models
Standard Package
Supplier Stocks
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Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
300 mA
Voltage - Collector Emitter Breakdown (Max)
25 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 30mA, 300mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 50mA, 1V
Power - Max
400 mW
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
KSD227
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi KSD227GBU
Documents & Media
Datasheets
1(KSD227)
Environmental Information
()
PCN Design/Specification
1(Copper Lead Frame 12/Oct/2007)
HTML Datasheet
1(KSD227)
EDA Models
1(KSD227GBU Models)
Quantity Price
-
Substitutes
-
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