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Part Number Overview
Manufacturer Part Number
SPD11N10
Description
MOSFET N-CH 100V 10.5A TO252-3
Detailed Description
N-Channel 100 V 10.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs
18.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
-
Base Product Number
SPD11N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPD11N10XT
SPD11N10BUMA1
SPD11N10INCT
SPD11N10INTR
SP000013847
SPD11N10XT-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPD11N10
Documents & Media
Datasheets
1(SPD,SPU11N10)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPD,SPU11N10)
Quantity Price
-
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