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Part Number Overview
Manufacturer Part Number
FDP8030L
Description
MOSFET N-CH 30V 80A TO220-3
Detailed Description
N-Channel 30 V 80A (Ta) 187W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
FDP8030L Models
Standard Package
59
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
187W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
FAIFSCFDP8030L
2156-FDP8030L
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP8030L
Documents & Media
Datasheets
1(FDP8030L Datasheet)
EDA Models
1(FDP8030L Models)
Quantity Price
Quantity: 59
Unit Price: $5.11
Packaging: Bulk
MinMultiplier: 59
Packaging: Bulk
MinMultiplier: 59
Substitutes
-