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Part Number Overview
Manufacturer Part Number
DTD113E
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 350 mW Through Hole TO-92 (TO-226)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
11,539
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
350 mW
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92 (TO-226)
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
ONSONSDTD113E
2156-DTD113E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/onsemi DTD113E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 11539
Unit Price: $0.03
Packaging: Bulk
MinMultiplier: 11539
Packaging: Bulk
MinMultiplier: 11539
Substitutes
-