China
Spain
Rusia
Italy
GermanyFQA6N90
Part Number Overview
Manufacturer Part Number
FQA6N90
Description
MOSFET N-CH 900V 6.4A TO3P
Detailed Description
N-Channel 900 V 6.4A (Tc) 198W (Tc) Through Hole TO-3P
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQA6N90 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 3.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1880 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
198W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA6
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQA6N90
Documents & Media
Datasheets
1(FQA6N90)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQA6N90)
EDA Models
1(FQA6N90 Models)
Quantity Price
-
Substitutes
-