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Part Number Overview
Manufacturer Part Number
APT11N80KC3G
Description
MOSFET N-CH 800V 11A TO220
Detailed Description
N-Channel 800 V 11A (Tc) 156W (Tc) Through Hole TO-220 [K]
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1585 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 [K]
Package / Case
TO-220-3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT11N80KC3GMI-ND
APT11N80KC3GMI
APT11N80KC3G-ND
150-APT11N80KC3G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT11N80KC3G
Documents & Media
Datasheets
1(High-Voltage Power Discretes and Modules)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 30/Apr/2015)
HTML Datasheet
1(Power Products Catalog)
Quantity Price
-
Substitutes
-