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Part Number Overview
Manufacturer Part Number
PSMN2R6-60PSQ
Description
NOW NEXPERIA PSMN2R6-60PSQ - 150
Detailed Description
N-Channel 60 V 150A (Tc) 326W (Tc) Through Hole TO-220AB
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
190
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7629 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
326W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-PSMN2R6-60PSQ
NEXNXPPSMN2R6-60PSQ
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PSMN2R6-60PSQ
Documents & Media
Datasheets
1(PSMN2R6-60PSQ Datasheet)
Quantity Price
Quantity: 190
Unit Price: $1.58
Packaging: Bulk
MinMultiplier: 190
Packaging: Bulk
MinMultiplier: 190
Substitutes
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