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Part Number Overview
Manufacturer Part Number
BDV65
Description
TRANS NPN 60V 12A TO218
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 12 A 60MHz 125 W Through Hole TO-218
Manufacturer
NTE Electronics, Inc
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
NTE Electronics, Inc
Series
-
Package
Bag
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 4V
Power - Max
125 W
Frequency - Transition
60MHz
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-218-3
Supplier Device Package
TO-218
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NTE Electronics, Inc BDV65
Documents & Media
Datasheets
1(BDV6x Datasheet)
Environmental Information
()
Quantity Price
Quantity: 100
Unit Price: $2.29
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 50
Unit Price: $2.35
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 20
Unit Price: $2.48
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 10
Unit Price: $2.62
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 1
Unit Price: $2.76
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Substitutes
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