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Part Number Overview
Manufacturer Part Number
SPP04N80C3XK
Description
MOSFET N-CH 800V 4A TO220-3
Detailed Description
N-Channel 800 V 4A (Tc) 63W (Tc) Through Hole PG-TO220-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
SPP04N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000013706
2156-SPP04N80C3XK
IFEINFSPP04N80C3XK
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPP04N80C3XK
Documents & Media
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Quantity Price
-
Substitutes
Part No. : SPP04N80C3XKSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 600
Unit Price. : $1.65000
Substitute Type. : Parametric Equivalent
Quantity Available. : 600
Unit Price. : $1.65000
Substitute Type. : Parametric Equivalent