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Part Number Overview
Manufacturer Part Number
2SD2695,T6F(J
Description
TRANS NPN 60V 2A TO92MOD
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 2 A 100MHz 900 mW Through Hole TO-92MOD
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A, 2V
Power - Max
900 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Base Product Number
2SD2695
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2SD2695T6FJ
2SD2695T6F(J
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SD2695,T6F(J
Documents & Media
Datasheets
1(2SD2695)
HTML Datasheet
1(2SD2695)
Quantity Price
-
Substitutes
-