China
Spain
Rusia
Italy
GermanySPP80N06S209
Part Number Overview
Manufacturer Part Number
SPP80N06S209
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 55 V 80A (Tc) 190W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
400
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-SPP80N06S209
INFINFSPP80N06S209
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPP80N06S209
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 400
Unit Price: $0.75
Packaging: Bulk
MinMultiplier: 400
Packaging: Bulk
MinMultiplier: 400
Substitutes
-