China
Spain
Rusia
Italy
GermanyRN1109MFV,L3F
Part Number Overview
Manufacturer Part Number
RN1109MFV,L3F
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
RN1109MFV,L3F Models
Standard Package
8,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1109
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RN1109MFV,L3F(B
RN1109MFVL3F
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1109MFV,L3F
Documents & Media
Datasheets
1(RN1107MFV-09MFV)
EDA Models
1(RN1109MFV,L3F Models)
Quantity Price
-
Substitutes
-