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Part Number Overview
Manufacturer Part Number
2SD1527-E
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 1000 V 500 mA 5MHz 1.8 W Through Hole TO-220AB
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
239
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
1000 V
Vce Saturation (Max) @ Ib, Ic
5V @ 60mA, 300mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 100mA, 5V
Power - Max
1.8 W
Frequency - Transition
5MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SD1527-E
RENRNS2SD1527-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD1527-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 239
Unit Price: $1.26
Packaging: Bulk
MinMultiplier: 239
Packaging: Bulk
MinMultiplier: 239
Substitutes
-