China
Spain
Rusia
Italy
GermanyFCP600N60Z
Part Number Overview
Manufacturer Part Number
FCP600N60Z
Description
POWER FIELD-EFFECT TRANSISTOR, N
Detailed Description
N-Channel 600 V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
258
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1120 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FCP600N60Z
ONSFSCFCP600N60Z
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCP600N60Z
Documents & Media
Datasheets
1(FCP600N60Z Datasheet)
Quantity Price
Quantity: 258
Unit Price: $1.16
Packaging: Bulk
MinMultiplier: 258
Packaging: Bulk
MinMultiplier: 258
Substitutes
-