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Part Number Overview
Manufacturer Part Number
F1T6G A1G
Description
DIODE GEN PURP 800V 1A TS-1
Detailed Description
Diode 800 V 1A Through Hole TS-1
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Box (TB)
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
800 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1.3 V @ 1 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
500 ns
Current - Reverse Leakage @ Vr
5 µA @ 800 V
Capacitance @ Vr, F
15pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
T-18, Axial
Supplier Device Package
TS-1
Operating Temperature - Junction
-55°C ~ 150°C
Base Product Number
F1T6
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
F1T6G A1G-ND
F1T6GA1G
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Taiwan Semiconductor Corporation F1T6G A1G
Documents & Media
Datasheets
1(F1T1G - F1T7G)
Environmental Information
()
Quantity Price
-
Substitutes
-