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Part Number Overview
Manufacturer Part Number
IPW65R041CFDFKSA1
Description
MOSFET N-CH 650V 68.5A TO247-3
Detailed Description
N-Channel 650 V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8400 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-1
Package / Case
TO-247-3
Base Product Number
IPW65R041
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPW65R041CFDFKSA1-ND
448-IPW65R041CFDFKSA1
IPW65R041CFD
IPW65R041CFD-ND
SP000756288
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW65R041CFDFKSA1
Documents & Media
Datasheets
1(IPW65R041CFD)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPW65R041CFD)
Simulation Models
1(CoolMOS™ Power MOSFET 650V CFD2 Spice Model)
Quantity Price
Quantity: 1
Unit Price: $14.94
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
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