China
Spain
Rusia
Italy
GermanyFQU30N06LTU
Part Number Overview
Manufacturer Part Number
FQU30N06LTU
Description
MOSFET N-CH 60V 24A IPAK
Detailed Description
N-Channel 60 V 24A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQU30N06LTU Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
39mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1040 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 44W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
FQU3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQU30N06LTU
Documents & Media
Datasheets
1(FQD30N06L, FQU30N06L)
Environmental Information
()
HTML Datasheet
1(FQD30N06L, FQU30N06L)
EDA Models
1(FQU30N06LTU Models)
Quantity Price
-
Substitutes
-