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Part Number Overview
Manufacturer Part Number
FGA50N100BNTD2
Description
IGBT 1000V 50A 156W TO3P
Detailed Description
IGBT NPT and Trench 1000 V 50 A 156 W Through Hole TO-3P
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT and Trench
Voltage - Collector Emitter Breakdown (Max)
1000 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
200 A
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
Power - Max
156 W
Switching Energy
-
Input Type
Standard
Gate Charge
257 nC
Td (on/off) @ 25°C
34ns/243ns
Test Condition
600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)
75 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Base Product Number
FGA50N100
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi FGA50N100BNTD2
Documents & Media
Datasheets
1(FGA50N100BNTD2)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 29/Jan/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mold compound change 17/Sep/2019)
PCN Packaging
()
Quantity Price
-
Substitutes
Part No. : GT50N322A
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 2
Unit Price. : $4.68000
Substitute Type. : Direct
Quantity Available. : 2
Unit Price. : $4.68000
Substitute Type. : Direct