China
Spain
Rusia
Italy
GermanyIRF7526D1
Part Number Overview
Manufacturer Part Number
IRF7526D1
Description
MOSFET P-CH 30V 2A MICRO8
Detailed Description
P-Channel 30 V 2A (Ta) 1.25W (Ta) Surface Mount Micro8™
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IRF7526D1 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
FETKY™
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
200mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.25W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro8™
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7526D1
Documents & Media
Datasheets
1(IRF7526D1)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF7526D1)
EDA Models
1(IRF7526D1 Models)
Quantity Price
-
Substitutes
-