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NDD60N900U1T4G
Part Number Overview
Manufacturer Part Number
NDD60N900U1T4G
Description
MOSFET N-CH 600V 5.7A DPAK
Detailed Description
N-Channel 600 V 5.7A (Tc) 74W (Tc) Surface Mount DPAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
NDD60N900U1T4G Models
Standard Package
2,500
Supplier Stocks
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Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
NDD60
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSONSNDD60N900U1T4G
2156-NDD60N900U1T4G-ONTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NDD60N900U1T4G
Documents & Media
Datasheets
1(NDD60N900U1)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 01/Sep/2017)
PCN Design/Specification
1(NDD60NYYY 25/Jan/2017)
PCN Assembly/Origin
1(Mult Devices 29/Aug/2017)
HTML Datasheet
1(NDD60N900U1)
EDA Models
1(NDD60N900U1T4G Models)
Quantity Price
-
Substitutes
Part No. : FCD900N60Z
Manufacturer. : onsemi
Quantity Available. : 1,902
Unit Price. : $1.61000
Substitute Type. : Similar
Part No. : SPD06N80C3ATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 0
Unit Price. : $1.94000
Substitute Type. : Similar
Part No. : TK5P60W,RVQ
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 9,180
Unit Price. : $1.79000
Substitute Type. : Similar
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