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Part Number Overview
Manufacturer Part Number
IRFU3412PBF
Description
MOSFET N-CH 100V 48A IPAK
Detailed Description
N-Channel 100 V 48A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3430 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU3412PBF
Documents & Media
Datasheets
1(IRFR3412PbF, IRFU3412PbF)
Other Related Documents
1(IR Part Numbering System)
Design Resources
1(IRFR3412PBF Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFR3412PbF, IRFU3412PbF)
Simulation Models
1(IRFR3412PBF Spice Model)
Quantity Price
-
Substitutes
-