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Part Number Overview
Manufacturer Part Number
NTD4906N-1G
Description
MOSFET N-CH 30V 10.3A/54A IPAK
Detailed Description
N-Channel 30 V 10.3A (Ta), 54A (Tc) 1.38W (Ta), 37.5W (Tc) Through Hole
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1932 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.38W (Ta), 37.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Base Product Number
NTD49
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-NTD4906N-1G-ON
ONSONSNTD4906N-1G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4906N-1G
Documents & Media
Datasheets
1(NTD4906N)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 30/Mar/2012)
HTML Datasheet
1(NTD4906N)
Quantity Price
-
Substitutes
-