China
Spain
Rusia
Italy
GermanyIRFS33N15DPBF
Part Number Overview
Manufacturer Part Number
IRFS33N15DPBF
Description
MOSFET N-CH 150V 33A D2PAK
Detailed Description
N-Channel 150 V 33A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount D2PAK
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IRFS33N15DPBF Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
56mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2020 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 170W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRFS33N15DPBF
SP001571762
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFS33N15DPBF
Documents & Media
Datasheets
1(IRFB,IRFS(L)_33N15DPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Material Chg 24/Nov/2015)
HTML Datasheet
1(IRFB,IRFS(L)_33N15DPbF)
EDA Models
1(IRFS33N15DPBF Models)
Quantity Price
-
Substitutes
Part No. : FDB2572
Manufacturer. : onsemi
Quantity Available. : 680
Unit Price. : $2.08000
Substitute Type. : Similar
Quantity Available. : 680
Unit Price. : $2.08000
Substitute Type. : Similar