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Part Number Overview
Manufacturer Part Number
2N5011
Description
NPN SILICON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN 600 V 200 mA 1 W Through Hole TO-5AA
Manufacturer
Microsemi Corporation
Standard LeadTime
40 Weeks
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
600 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 5mA, 25mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 25mA, 10V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Supplier Device Package
TO-5AA
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
150-2N5011
2N5011-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microsemi Corporation 2N5011
Documents & Media
Datasheets
1(2N5010(S) - 2N5015(S))
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev Assembly Site 31/Jan/2024)
HTML Datasheet
1(2N5010(S) - 2N5015(S))
Quantity Price
Quantity: 100
Unit Price: $18.98
Packaging: Bulk
MinMultiplier: 100
Packaging: Bulk
MinMultiplier: 100
Substitutes
-