China
Spain
Rusia
Italy
GermanyIXTQ130N20T
Part Number Overview
Manufacturer Part Number
IXTQ130N20T
Description
MOSFET N-CH 200V 130A TO3P
Detailed Description
N-Channel 200 V 130A (Tc) 830W (Tc) Through Hole TO-3P
Manufacturer
IXYS
Standard LeadTime
45 Weeks
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
Trench
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16mOhm @ 65A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
830W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXTQ130
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTQ130N20T
Documents & Media
Datasheets
1(IXTx130N20T)
Environmental Information
1(Ixys IC REACH)
PCN Design/Specification
1(Multiple Devices Material 23/Jun/2020)
Quantity Price
Quantity: 300
Unit Price: $6.67683
Packaging: Tube
MinMultiplier: 300
Packaging: Tube
MinMultiplier: 300
Substitutes
-