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Part Number Overview
Manufacturer Part Number
2SA1709T-EPN-AN
Description
BIP PNP 2A 100V
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 2 A 120MHz 1 W Through Hole 3-NMP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,219
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 5V
Power - Max
1 W
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
SC-71
Supplier Device Package
3-NMP
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SA1709T-EPN-AN
ONSONS2SA1709T-EPN-AN
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SA1709T-EPN-AN
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 2219
Unit Price: $0.14
Packaging: Bulk
MinMultiplier: 2219
Packaging: Bulk
MinMultiplier: 2219
Substitutes
-