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Part Number Overview
Manufacturer Part Number
PUMD17,115
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-363
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
15,000
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
-
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Base Product Number
PUMD17
Environmental & Export Classifications
HTSUS
0000.00.0000
Other Names
2156-PUMD17,115
NEXNEXPUMD17,115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/NXP USA Inc. PUMD17,115
Documents & Media
Datasheets
1(PEMD17,115 Datasheet)
Quantity Price
Quantity: 15000
Unit Price: $0.02
Packaging: Bulk
MinMultiplier: 15000
Packaging: Bulk
MinMultiplier: 15000
Substitutes
-