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Part Number Overview
Manufacturer Part Number
HUF75639S3
Description
MOSFET N-CH 100V 56A I2PAK
Detailed Description
N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
207
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HUF75639S3-HC
HARHARHUF75639S3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation HUF75639S3
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 207
Unit Price: $1.46
Packaging: Tube
MinMultiplier: 207
Packaging: Tube
MinMultiplier: 207
Substitutes
-