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Part Number Overview
Manufacturer Part Number
2SB860-E
Description
POWER BIPOLAR TRANSISTOR, PNP
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 4 A 1.8 W Through Hole TO-220AB
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
285
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA, 4V
Power - Max
1.8 W
Frequency - Transition
-
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SB860-E
RENRNS2SB860-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB860-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 286
Unit Price: $1.05
Packaging: Bulk
MinMultiplier: 286
Packaging: Bulk
MinMultiplier: 286
Substitutes
-