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Part Number Overview
Manufacturer Part Number
2SA1930(LBS2MATQ,M
Description
TRANS PNP 180V 2A TO220NIS
Detailed Description
Bipolar (BJT) Transistor PNP 180 V 2 A 200MHz 2 W Through Hole TO-220NIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
180 V
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Current - Collector Cutoff (Max)
5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
2 W
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SA1930
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2SA1930(LBS2MATQM
2SA1930LBS2MATQM
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SA1930(LBS2MATQ,M
Documents & Media
Datasheets
1(2SA1930)
HTML Datasheet
1(2SA1930)
Quantity Price
-
Substitutes
-