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Part Number Overview
Manufacturer Part Number
FDMS7580
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 25 V 15A (Ta), 29A (Tc) 2.5W (Ta), 27W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
404
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1190 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 27W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerTDFN
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FDMS7580
FAIFSCFDMS7580
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDMS7580
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 404
Unit Price: $0.74
Packaging: Bulk
MinMultiplier: 404
Packaging: Bulk
MinMultiplier: 404
Substitutes
-