China
Spain
Rusia
Italy
GermanyHUF75639S3ST
Part Number Overview
Manufacturer Part Number
HUF75639S3ST
Description
POWER FIELD-EFFECT TRANSISTOR, 5
Detailed Description
N-Channel 100 V 56A (Tc) 200W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
235
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCHUF75639S3ST
2156-HUF75639S3ST
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF75639S3ST
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 235
Unit Price: $1.28
Packaging: Bulk
MinMultiplier: 235
Packaging: Bulk
MinMultiplier: 235
Substitutes
-