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Part Number Overview
Manufacturer Part Number
AOWF12N65
Description
MOSFET N-CH 650V 12A TO262F
Detailed Description
N-Channel 650 V 12A (Tc) 28W (Tc) Through Hole TO-262F
Manufacturer
Alpha & Omega Semiconductor Inc.
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Alpha & Omega Semiconductor Inc.
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
720mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262F
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
AOWF12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Alpha & Omega Semiconductor Inc. AOWF12N65
Documents & Media
Datasheets
1(AOW(F)12N65)
Other Related Documents
1(AOS Green Policy)
Environmental Information
()
PCN Obsolescence/ EOL
()
PCN Design/Specification
1(Mult Dev Molding Chg 8/Jul/2020)
PCN Assembly/Origin
1(Mult Dev Assem/Test Chg 19/Jul/2018)
HTML Datasheet
1(AOW(F)12N65)
Product Drawings
1(TO262F Pkg Drawing)
Quantity Price
-
Substitutes
-