China
Spain
Rusia
Italy
GermanyKSC1009GBU
Part Number Overview
Manufacturer Part Number
KSC1009GBU
Description
TRANS NPN 140V 0.7A TO92-3
Detailed Description
Bipolar (BJT) Transistor NPN 140 V 700 mA 50MHz 800 mW Through Hole TO-92-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
KSC1009GBU Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
700 mA
Voltage - Collector Emitter Breakdown (Max)
140 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 20mA, 200mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 50mA, 2V
Power - Max
800 mW
Frequency - Transition
50MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
KSC1009
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi KSC1009GBU
Documents & Media
Datasheets
1(KSC1009)
Environmental Information
()
PCN Design/Specification
1(Copper Lead Frame 12/Oct/2007)
EDA Models
1(KSC1009GBU Models)
Quantity Price
-
Substitutes
-