China
Spain
Rusia
Italy
GermanyIPP60R600CP
Part Number Overview
Manufacturer Part Number
IPP60R600CP
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 600 V 6.1A (Tc) 60W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
433
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFIPP60R600CP
2156-IPP60R600CP
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP60R600CP
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 433
Unit Price: $0.69
Packaging: Bulk
MinMultiplier: 433
Packaging: Bulk
MinMultiplier: 433
Substitutes
-