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Part Number Overview
Manufacturer Part Number
2SK4210
Description
MOSFET N-CH 900V 10A TO3PB
Detailed Description
N-Channel 900 V 10A (Ta) 2.5W (Ta), 190W (Tc) Through Hole TO-3PB
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
100
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tray
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 190W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PB
Package / Case
TO-3P-3, SC-65-3
Base Product Number
2SK4210
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSSNY2SK4210
2156-2SK4210-ON
ONSONS2SK4210
2156-2SK4210
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi 2SK4210
Documents & Media
Datasheets
1(2SK4210)
Environmental Information
()
Quantity Price
-
Substitutes
Part No. : 2SK1342-E
Manufacturer. : Renesas Electronics Corporation
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Similar
Part No. : TK9J90E,S1E
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 0
Unit Price. : $2.68000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $2.68000
Substitute Type. : Similar