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Part Number Overview
Manufacturer Part Number
SIR640ADP-T1-GE3
Description
MOSFET N-CH 40V 41.6A/100A PPAK
Detailed Description
N-Channel 40 V 41.6A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
62 Weeks
Edacad Model
SIR640ADP-T1-GE3 Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
41.6A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4240 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR640
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIR640ADP-T1-GE3TR
SIR640ADP-T1-GE3CT
SIR640ADP-T1-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR640ADP-T1-GE3
Documents & Media
Datasheets
1(SiR640ADP)
PCN Design/Specification
1(Mult Dev 07/Jun/2023)
PCN Assembly/Origin
1(New solder paste 26/May/2023)
HTML Datasheet
1(SiR640ADP)
EDA Models
1(SIR640ADP-T1-GE3 Models)
Quantity Price
Quantity: 9000
Unit Price: $0.775
Packaging: Tape & Reel (TR)
MinMultiplier: 3000
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Packaging: Digi-Reel®
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