China
Spain
Rusia
Italy
GermanyFQAF47P06
Part Number Overview
Manufacturer Part Number
FQAF47P06
Description
MOSFET P-CH 60V 38A TO3PF
Detailed Description
P-Channel 60 V 38A (Tc) 100W (Tc) Through Hole TO-3PF
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQAF47P06 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
26mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Base Product Number
FQAF4
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQAF47P06
Documents & Media
Datasheets
1(FQAF47P06)
Environmental Information
()
HTML Datasheet
1(FQAF47P06)
EDA Models
1(FQAF47P06 Models)
Quantity Price
-
Substitutes
-