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2SC4793(F,M)
Part Number Overview
Manufacturer Part Number
2SC4793(F,M)
Description
TRANS NPN 230V 1A TO220NIS
Detailed Description
Bipolar (BJT) Transistor NPN 230 V 1 A 100MHz 2 W Through Hole TO-220NIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
2SC4793(F,M) Models
Standard Package
500
Supplier Stocks
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Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
230 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
2 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SC4793
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2SC4793(F,M)-ND
2SC4793(Q)
2SC4793-NDR
2SC4793F,M-ND
2SC4793FM
2SC4793Q
2SC4793Q-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SC4793(F,M)
Documents & Media
Datasheets
1(2SC4793)
HTML Datasheet
1(2SC4793)
EDA Models
1(2SC4793(F,M) Models)
Quantity Price
-
Substitutes
Part No. : TTC011B,Q(S
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Similar
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