China
Spain
Rusia
Italy
GermanyIRFBF20LPBF
Part Number Overview
Manufacturer Part Number
IRFBF20LPBF
Description
MOSFET N-CH 900V 1.7A I2PAK
Detailed Description
N-Channel 900 V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Through Hole I2PAK
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 54W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFBF20
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFBF20LPBF
Documents & Media
Datasheets
1(IRFBF20S,L, SiHFBF20S,L)
PCN Assembly/Origin
1(Mult Devices 18/Jul/2017)
Product Drawings
()
Quantity Price
Quantity: 1000
Unit Price: $1.12979
Packaging: Tube
MinMultiplier: 1000
Packaging: Tube
MinMultiplier: 1000
Substitutes
-