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Part Number Overview
Manufacturer Part Number
APT10M11B2VFRG
Description
MOSFET N-CH 100V 100A T-MAX
Detailed Description
N-Channel 100 V 100A (Tc) 520W (Tc) Through Hole T-MAX™
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
POWER MOS V®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
450 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX™
Package / Case
TO-247-3 Variant
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT10M11B2VFRG-ND
150-APT10M11B2VFRG
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT10M11B2VFRG
Documents & Media
Datasheets
1(APT10M11(B2,L)VFR)
Environmental Information
()
HTML Datasheet
1(APT10M11(B2,L)VFR)
Quantity Price
-
Substitutes
-