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Part Number Overview
Manufacturer Part Number
FDB86102LZ
Description
POWER FIELD-EFFECT TRANSISTOR, 8
Detailed Description
N-Channel 100 V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
345
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
24mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1275 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
ONSONSFDB86102LZ
2156-FDB86102LZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDB86102LZ
Documents & Media
Datasheets
1(FDB86102LZ Datasheet)
Quantity Price
Quantity: 345
Unit Price: $0.87
Packaging: Bulk
MinMultiplier: 345
Packaging: Bulk
MinMultiplier: 345
Substitutes
-