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Part Number Overview
Manufacturer Part Number
BSF110N06NT3GXUMA1
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 60 V 47A (Tc) 38W (Tc) Surface Mount MG-WDSON-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
649
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™ 3
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2
Package / Case
DirectFET™ Isometric ST
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFBSF110N06NT3GXUMA1
2156-BSF110N06NT3GXUMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSF110N06NT3GXUMA1
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 649
Unit Price: $0.46
Packaging: Bulk
MinMultiplier: 649
Packaging: Bulk
MinMultiplier: 649
Substitutes
-