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Part Number Overview
Manufacturer Part Number
2SD991K
Description
POWER BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 300 V 6 A 50 W Through Hole TO-220AB
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
76
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
6 A
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 40mA, 4A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 4A, 2V
Power - Max
50 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-2SD991K
RENRNS2SD991K
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD991K
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 76
Unit Price: $3.97
Packaging: Bulk
MinMultiplier: 76
Packaging: Bulk
MinMultiplier: 76
Substitutes
-