China
Spain
Rusia
Italy
Germany2SB892S-AE
Part Number Overview
Manufacturer Part Number
2SB892S-AE
Description
PNP SILICON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor PNP 50 V 2 A 150MHz 1 W Through Hole 3-MP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,049
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 2V
Power - Max
1 W
Frequency - Transition
150MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SB892S-AE
ONSONS2SB892S-AE
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB892S-AE
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 2049
Unit Price: $0.15
Packaging: Bulk
MinMultiplier: 2049
Packaging: Bulk
MinMultiplier: 2049
Substitutes
-