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Part Number Overview
Manufacturer Part Number
NTE25
Description
TRANS PNP 80V 1A TO237
Detailed Description
Bipolar (BJT) Transistor PNP 80 V 1 A 50MHz 850 mW Through Hole TO-237
Manufacturer
NTE Electronics, Inc
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
NTE Electronics, Inc
Series
-
Package
Bag
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 250mA, 2V
Power - Max
850 mW
Frequency - Transition
50MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-237AA
Supplier Device Package
TO-237
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NTE Electronics, Inc NTE25
Documents & Media
Datasheets
1(NTE24 Datasheet)
Environmental Information
()
HTML Datasheet
1(NTE24 Datasheet)
Quantity Price
Quantity: 100
Unit Price: $1.43
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 50
Unit Price: $1.46
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 20
Unit Price: $1.55
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 10
Unit Price: $1.63
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 1
Unit Price: $1.72
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Substitutes
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