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AUIRFSL6535
Part Number Overview
Manufacturer Part Number
AUIRFSL6535
Description
MOSFET N-CH 300V 19A TO262-3
Detailed Description
N-Channel 300 V 19A (Tc) 210W (Tc) Through Hole PG-TO262-3-901
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
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Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
185mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2340 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
210W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-901
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFAUIRFSL6535
SP001522854
2156-AUIRFSL6535
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRFSL6535
Documents & Media
Datasheets
1(AUIRFS(L)6535)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(AUIRFS(L)6535)
Simulation Models
1(AUIRFS_SL6535 Spice Model)
Quantity Price
-
Substitutes
-
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