China
Spain
Rusia
Italy
GermanyIRFU4105ZPBF
Part Number Overview
Manufacturer Part Number
IRFU4105ZPBF
Description
MOSFET N-CH 55V 30A IPAK
Detailed Description
N-Channel 55 V 30A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRFU4105ZPBF
*IRFU4105ZPBF
SP001552434
INFINFIRFU4105ZPBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU4105ZPBF
Documents & Media
Datasheets
1(IRFR4105ZPbF, IRFU4105ZPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFR4105ZPbF, IRFU4105ZPbF)
Simulation Models
1(IRFR4105Z Saber Model)
Quantity Price
-
Substitutes
Part No. : IRFU4615PBF
Manufacturer. : Infineon Technologies
Quantity Available. : 1,792
Unit Price. : $1.84000
Substitute Type. : Similar
Quantity Available. : 1,792
Unit Price. : $1.84000
Substitute Type. : Similar