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Part Number Overview
Manufacturer Part Number
RN1961FE(TE85L,F)
Description
TRANS 2NPN PREBIAS 0.1W ES6
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
4,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN1961
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RN1961FE(TE85LF)DKR
RN1961FE(TE85LF)TR
RN1961FE(TE85LF)CT
RN1961FETE85LF
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Toshiba Semiconductor and Storage RN1961FE(TE85L,F)
Documents & Media
Datasheets
1(RN1961-66FE)
Quantity Price
-
Substitutes
-